Ab initio study of phonons in hexagonal GaN

被引:42
作者
Parlinski, K [1 ]
Kawazoe, Y [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 23期
关键词
D O I
10.1103/PhysRevB.60.15511
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phonon dispersion relations for the hexagonal wurtzite phase of 2H-GaN are estimated using the local-density approximation with ultrasoft pseudopotentials and plane-wave basis, calculating the Hellmann-Feynman forces and applying the direct method. Ab initio calculations are performed on the rhombohedral supercell, which lowers the crystal space group. We propose a method to restore the proper symmetry. The calculated phonon frequencies at the Gamma point are compared with Raman:and infrared measurements, phenomenological models and other nb initio calculations, and a very good agreement is obtained. Phonon frequencies at high-symmetry zone-boundary points and phonon density of states are deduced as well. [S0163-1829(99)08643-9].
引用
收藏
页码:15511 / 15514
页数:4
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