Minigap in a long disordered SNS junction: Analytical results

被引：17

作者：

Ivanov, DA ^{[1
]}

von Roten, R ^{[1
]}

Blatter, G ^{[1
]}

机构：

[1] ETH Honggerberg, Inst Theoret Phys, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.66.052507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review and refine analytical results on the density of states in a long disordered superconductor-normal-metal-superconductor junction with transparent interfaces. Our analysis includes the behavior of the minigap near phase differences zero and pi across the junction, as well as the density of states at energies much larger than the minigap but much smaller than the superconducting gap.

引用

页码：1 / 4

页数：4

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