Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

被引：96

作者：

Soref, R. A. ^{[1
]}

Lorenzo, J. P. ^{[1
]}

机构：

[1] USAF, Rome Air Dev Ctr, Solid State Sci Div, Hanscom AFB, MA 01731 USA

来源：

ELECTRONICS LETTERS | 2009年

关键词：

D O I：

10.1049/el:19850673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first all-silicon integrated-optical components for 1.3/1.6 mu m have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n(+) or p on p(+)). Active components are proposed.

引用

页码：26 / 27

页数：2