InP-based high-performance monostable bistable transition logic elements (MOBILE's) using integrated multiple-input resonant-tunneling devices

被引:88
作者
Chen, KJ
Maezawa, K
Yamamoto, M
机构
[1] NTT LSI Laboratories, Kanagawa
关键词
D O I
10.1109/55.485189
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
MOBILE's (monostable-bistable transition logic elements), which have the advantages of multiple-input and multiple-function, are demonstrated in InP-based material system using monolithic integration of resonant-tunneling diodes and high electron mobility transistors, The high peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILE's, are demonstrated in this InP-based material system, A fabricated MOBILE with three-input gates having 1:2:4 width ratio can perform weighted-sum threshold logic operation, and has a wide range of applications in new computing architectures, such as neural networks.
引用
收藏
页码:127 / 129
页数:3
相关论文
共 14 条
[1]   WEIGHTED SUM THRESHOLD LOGIC OPERATION OF MOBILE (MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENT) USING RESONANT-TUNNELING TRANSISTORS [J].
AKEYOSHI, T ;
MAEZAWA, K ;
MIZUTANI, T .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (10) :475-477
[2]  
CAPASSO F, 1990, HIGH SPEED SEMICONDU, P465
[3]   MONOLITHIC INTEGRATION OF RESONANT-TUNNELING DIODES AND FETS FOR MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENTS (MOBILES) [J].
CHEN, KJ ;
AKEYOSHI, T ;
MAEZAWA, K .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (02) :70-73
[4]   High-performance InP-Based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies [J].
Chen, KJ ;
Enoki, T ;
Maezawa, K ;
Arai, K ;
Yamamoto, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) :252-257
[5]   RESET-SET FLIPFLOP BASED ON A NOVEL-APPROACH OF MODULATING RESONANT-TUNNELING CURRENT WITH FET GATES [J].
CHEN, KJ ;
AKEYOSHI, T ;
MAEZAWA, K .
ELECTRONICS LETTERS, 1994, 30 (21) :1805-1806
[6]   ETCH RATES AND SELECTIVITIES OF CITRIC ACID/HYDROGEN PEROXIDE ON GAAS, AL0.3GA0.7AS, IN0.2GA0.8AS, IN0.53GA0.47AS, IN0.52AL0.48AS, AND INP [J].
DESALVO, GC ;
TSENG, WF ;
COMAS, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (03) :831-835
[7]  
Enoki T, 1994, IEEE GAAS IC S, P337
[8]  
MAEEZAWA K, 1994, IEEE T ELECTRON DEV, V41, P148
[9]   A NEW RESONANT TUNNELING LOGIC GATE EMPLOYING MONOSTABLE-BISTABLE TRANSITION [J].
MAEZAWA, K ;
MIZUTANI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L42-L44
[10]  
Maezawa K., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P415, DOI 10.1109/IEDM.1993.347321