Thermoelectric properties of pure and doped FeMSb (M=V,Nb)

被引:134
作者
Young, DP [1 ]
Khalifah, P
Cava, RJ
Ramirez, AP
机构
[1] Princeton Univ, Dept Chem, Princeton, NJ 08540 USA
[2] Princeton Univ, Princeton Mat Inst, Princeton, NJ 08540 USA
[3] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA
关键词
D O I
10.1063/1.371863
中图分类号
O59 [应用物理学];
学科分类号
摘要
The thermoelectric properties of the pure and doped half-Heusler compounds FeVSb and FeNbSb are reported. The electrical resistivities are between 0.2 and 20 m Omega cm at room temperature. Thermoelectric power measurements indicate that FeVSb is an n-type material with moderate Seebeck coefficients near -70 mu V/K at 300 K. The thermal conductivity at room temperature is large, approximately 0.1 W/cm K, and increases with decreasing temperature. Chemical substitutions, which have a dramatic effect on the transport properties, were performed in an effort to enhance the thermoelectric performance. Band-structure calculations are presented for the pure materials. (C) 2000 American Institute of Physics. [S0021-8979(00)03001-2].
引用
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页码:317 / 321
页数:5
相关论文
共 10 条
[1]   EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY [J].
ANDERSEN, OK ;
JEPSEN, O .
PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2571-2574
[2]   ILLUSTRATION OF THE LINEAR-MUFFIN-TIN-ORBITAL TIGHT-BINDING REPRESENTATION - COMPACT ORBITALS AND CHARGE-DENSITY IN SI [J].
ANDERSEN, OK ;
PAWLOWSKA, Z ;
JEPSEN, O .
PHYSICAL REVIEW B, 1986, 34 (08) :5253-5269
[3]   MEASUREMENT OF THERMAL CONDUCTIVITY BY UTILIZATION OF THE PELTIER EFFECT [J].
HARMAN, TC ;
CAHN, JH ;
LOGAN, MJ .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (09) :1351-1359
[4]   Efficient dopants for ZrNiSn-based thermoelectric materials [J].
Hohl, H ;
Ramirez, AP ;
Goldmann, C ;
Ernst, G ;
Wölfing, B ;
Bucher, E .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709
[5]   Physical properties of the weak itinerant ferromagnet CoVSb and related semi-Heusler compounds [J].
Kaczmarska, K ;
Pierre, J ;
Beille, J ;
Tobola, J ;
Skolozdra, RV ;
Melnik, GA .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1998, 187 (02) :210-220
[6]   Antimonides with the half-Heusler structure: New thermoelectric materials [J].
Mastronardi, K ;
Young, D ;
Wang, CC ;
Khalifah, P ;
Cava, RJ ;
Ramirez, AP .
APPLIED PHYSICS LETTERS, 1999, 74 (10) :1415-1417
[7]   Filled skutterudite antimonides: A new class of thermoelectric materials [J].
Sales, BC ;
Mandrus, D ;
Williams, RK .
SCIENCE, 1996, 272 (5266) :1325-1328
[8]  
Scherrer H., 1995, CRC Handbook of thermoelectrics, P211
[9]   Crossover from semiconductor to magnetic metal in semi-Heusler phases as a function of valence electron concentration [J].
Tobola, J ;
Pierre, J ;
Kaprzyk, S ;
Skolozdra, RV ;
Kouacou, MA .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (05) :1013-1032
[10]   Transport properties of pure and doped MNiSn (M=Zr, Hf) [J].
Uher, C ;
Yang, J ;
Hu, S ;
Morelli, DT ;
Meisner, GP .
PHYSICAL REVIEW B, 1999, 59 (13) :8615-8621