Organic light-emitting devices obtained with helium-ion-beam-assisted deposition process

被引：11

作者：

Antony, R ^{[1
]}

Moliton, A ^{[1
]}

Lucas, B ^{[1
]}

机构：

[1] Univ Limoges, Fac Sci, Unite Microelect Optoelect & Polymeres, F-87060 Limoges, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 70卷 / 02期

关键词：

D O I：

10.1007/s003390050031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Until now, the organic light-emitting diode (OLED) has consisted of a luminescent electron transport layer (Alq3 in our case) and a hole transport layer (HTL) such as TPD (obtained in a chemical way) which differs from the luminescent layer. In this paper, we report results where the HTL layer is also the luminescent layer (Alq3) modified by a physical way: the ion-beam-assisted deposition (IBAD). With helium ions, which are inactive ions with a small size, we determine the ion-beam parameters to optimize the OLED optoelectronic parameters: ion-beam energy E-i = 100 eV, ion-beam current density J(i) = 100 nA/cm(2), speed of deposition upsilon(dep) = 0.41 nm/s. With these ion-beam parameters and only an ion-beam assistance of the Alq3 layer located on the anode side, we obtain a twentyfold improvement in efficiency.

引用

页码：185 / 195

页数：11

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