Amorphous silicon and silicon germanium materials for high-efficiency triple-junction solar cells

被引：63

作者：

Deng, XM ^{[1
]}

Liao, XB ^{[1
]}

Han, SJ ^{[1
]}

Povolny, H ^{[1
]}

Agarwal, P ^{[1
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 62卷 / 1-2期

关键词：

a-Si; a-SiGe; solar cells;

D O I：

10.1016/S0927-0248(99)00139-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we report our recent progress in the amorphous silicon (a-Si)-based photovoltaic research program at The University of Toledo (UT). We have achieved the fabrication of (1) wide bandgap a-Si solar cells with an open-circuit voltage of 0.981 and a fill factor of 0.728 using high hydrogen dilution for the i-layer deposition, (2) mid bandgap a-SiGe solar cells having an open-circuit voltage of 0.815 and a hh factor of 0.65, (3) narrow bandgap a-SiGe solar cells with 9.17% initial efficiency? and (4) triple-junction, spectrum-splitting a-Si/a-SiGe/a-SiGe solar cells with 10.6% initial efficiency. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：89 / 95

页数：7