Dielectrophoretic reconfiguration of nanowire interconnects

被引：30

作者：

Wissner-Gross, Alexander D. ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 19期

关键词：

D O I：

10.1088/0957-4484/17/19/035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nanowire interconnects are dielectrophoretically assembled, reconfigured, and disassembled between gold electrodes in benzyl alcohol. Assembly of up to 55 mu m long nanowires is demonstrated. Conductance enhancement is observed in the presence of single nanowires trapped between submerged electrodes. Phase inversion of electrode potentials allows the reversible reconfiguration of nanowires, either serially or in parallel. For disassembly, high-voltage bursts are observed to detonate trapped nanowires. The reconfiguration of colloidal electronic nanostructures opens up the possibility of nanostructured connection architectures for computation.

引用

页码：4986 / 4990

页数：5

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