Advances in monocrystalline Si thin film solar cells by layer transfer

被引：72

作者：

Bergmann, RB ^{[1
]}

Berge, C ^{[1
]}

Rinke, TJ ^{[1
]}

Schmidt, J ^{[1
]}

Werner, JH ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

Si; solar cells; diffusion length; light trapping; device modeling;

D O I：

10.1016/S0927-0248(02)00070-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5 mum, respectively, and a cell area of 4 cm(2). Device simulations indicate an efficiency potential above 20%. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：213 / 218

页数：6

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