Trends of structural and electrical properties in atomic layer deposited HfO2 films

被引：31

作者：

Scarel, G ^{[1
]}

Spiga, S ^{[1
]}

Wiemer, C ^{[1
]}

Tallarida, G ^{[1
]}

Ferrari, S ^{[1
]}

Fanciulli, M ^{[1
]}

机构：

[1] INFM, Lab MDM, I-20041 Agrate Brianza, Italy

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 109卷 / 1-3期

关键词：

high-kappa oxides; hafnium dioxide; atomic layer deposition;

D O I：

10.1016/j.mseb.2003.10.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Understanding and optimizing electrical and structural properties of high-kappa oxides are key steps in view of their application as SiO2 substitutes in CMOS devices. In this work, we address the effects of growth temperature (T-g,) post-deposition annealing and substrate preparation on the structural, compositional, and electrical properties of thin films (approximate to13 nm thick), deposited on p-type Si(1 0 0)/SiO2 (chemical oxide) by atomic layer deposition (ALD). In particular, we investigate the effects of: (1) different T-g (150, 250 and 350 degreesC); (2) rapid thermal annealing at 950 degreesC in N-2 for 60 s; and (3) substrate in situ heat treatment before growth and longer pulses at the beginning of the deposition. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：11 / 16

页数：6

共 12 条

[1] Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films [J].