SiGe HBTs for millimeter-wave applications with simultaneously optimized fT and fmax of 300 GHz

被引：38

作者：

Rieh, JS ^{[1
]}

Greenberg, D ^{[1
]}

Khater, M ^{[1
]}

Schonenberg, KT ^{[1
]}

Jeng, SJ ^{[1
]}

Pagette, F ^{[1
]}

Adam, T ^{[1
]}

Chinthakindi, A ^{[1
]}

Florkey, J ^{[1
]}

Jagannathan, B ^{[1
]}

Johnson, J ^{[1
]}

Krishnasamy, R ^{[1
]}

Sanderson, D ^{[1
]}

Schnabel, C ^{[1
]}

Smith, P ^{[1
]}

Stricker, A ^{[1
]}

Sweeney, S ^{[1
]}

Vaed, K ^{[1
]}

Yanagisawa, T ^{[1
]}

Ahlgren, D ^{[1
]}

Stein, K ^{[1
]}

Freeman, G ^{[1
]}

机构：

[1] IBM Corp, Semicond R&D Ctr, Hopewell Jct, NY 12533 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

millimeter-wave; SiGe heterojunction bipolar transistor; high-speed; noise;

D O I：

10.1109/RFIC.2004.1320632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f(T) and f(max) of > 300 GHz are developed. To the author's knowledge, this is the first report of f(T) and f(max) both exceeding 300 GHz for any Si-based transistor. BVCEO and BVCBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F-min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.

引用

页码：395 / 398

页数：4

共 17 条

[1]

Böck J, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P763, DOI 10.1109/IEDM.2002.1175950

[2]

Hashimoto T, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P129

[3]

Hashimoto T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P779, DOI 10.1109/IEDM.2002.1175954

[4]

Heinemann B, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P775, DOI 10.1109/IEDM.2002.1175953

[5] Self-aligned SiGeNPN transistors with 285 GHz fMAX and 207 GHz fT in a manufacturable technology [J].

Jagannathan, B ;

Khater, M ;

Pagette, F ;

Rieh, JS ;

Angell, D ;

Chen, H ;

Florkey, J ;

Golan, F ;

Greenberg, DR ;

Groves, R ;

Jeng, SJ ;

Johnson, J ;

Mengistu, E ;

Schonenberg, KT ;

Schnabel, CM ;

Smith, P ;

Stricker, A ;

Ahlgren, D ;

Freeman, G ;

Stein, K ;

Subbanna, S .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (05) :258-260

[6]

MEISTER TF, 2003, P BIP BICMOS CIRC TE

[7]

PLANA R, 2000, P 22 INT C MICR, P415

[8] 60GHz transceiver circuits in SiGe bipolar technology [J].

Reynolds, S ;

Floyd, B ;

Pfeiffer, U ;

Zwick, T .

2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :442-443

[9] A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors [J].

Rieh, JS ;

Jagannathan, B ;

Greenberg, D ;

Freeman, G ;

Subbanna, S .

SOLID-STATE ELECTRONICS, 2004, 48 (02) :339-343

[10]

Rieh JS, 2003, CONF P INDIUM PHOSPH, P374

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