Island density in homoepitaxial growth: improved Monte Carlo results

被引:8
作者
Jeong, H
Kahng, B
Wolf, DE
机构
[1] KONKUK UNIV, DEPT PHYS, SEOUL 143701, SOUTH KOREA
[2] KONKUK UNIV, CTR ADV MAT & DEVICES, SEOUL 143701, SOUTH KOREA
[3] SEOUL NATL UNIV, DEPT PHYS, SEOUL 151742, SOUTH KOREA
[4] SEOUL NATL UNIV, CTR THEORET PHYS, SEOUL 151742, SOUTH KOREA
[5] GERHARD MERCATOR UNIV, FB 10, D-47048 DUISBURG, GERMANY
关键词
D O I
10.1016/S0378-4371(97)00311-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We reexamine the density of two dimensional islands in the submonolayer regime of a homoepitaxially growing surface using the coarse grained Monte Carlo simulation with random sequential updating rather than parallel updating. It turns out that the power law dependence of the density of islands on the deposition rate agrees much better with the theoretical prediction than previous data obtained by other methods if random sequential instead of parallel updating is used.
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页码:355 / 360
页数:6
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