Preparation and low temperature properties of FeSi-type RuSi

被引：23

作者：

Buschinger, B ^{[1
]}

Geibel, C ^{[1
]}

Diehl, J ^{[1
]}

Weiden, M ^{[1
]}

Guth, W ^{[1
]}

Wildbrett, A ^{[1
]}

Horn, S ^{[1
]}

Steglich, F ^{[1
]}

机构：

[1] UNIV AUGSBURG,LEHRSTUHL EXPT PHYS,D-86135 AUGSBURG,GERMANY

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1997年 / 256卷 / 1-2期

关键词：

semiconductor; low temperature; ruthenium silicide; structural transformation;

D O I：

10.1016/S0925-8388(96)03021-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have reinvestigated the metallographic RuSi phase diagram and could establish the transition temperature from the low temperature FeSi-type to the high temperature CsCl-type structure for stoichiometric samples. Magnetic and transport properties of the low temperature modification in the temperature range 1.5 K<T<300 K are presented and discussed. FeSi-type RuSi is found to be semiconducting but still in the extrinsic regime at room temperature. Below 100 K, an additional gap opens and at temperatures <40 K variable-range hopping conduction sets in as the dominant transport mechanism. In contrast, resistivity measurements on CsCl-type RuSi show simple metallic behavior. (C) 1997 Elsevier Science S.A.

引用

页码：57 / 60

页数：4

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