Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys

被引:120
作者
Bhattacharya, S
Tritt, TM [1 ]
Xia, Y
Ponnambalam, V
Poon, SJ
Thadhani, N
机构
[1] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[2] Univ Virginia, Dept Phys, Charlottesville, VA 22901 USA
[3] Georgia Inst Technol, Dept Mat Sci & Engn, Atlanta, GA USA
关键词
D O I
10.1063/1.1488698
中图分类号
O59 [应用物理学];
学科分类号
摘要
Half-Heusler alloys with the general formula TiNiSn1-xSbx are currently being investigated for their potential as thermoelectric (TE) materials. A systematic investigation of the effect of Sb doping on the Sn site and Zr doping on the Ti site on the electrical and thermal transport of the TiNiSn system has been performed. Unexpectedly, lattice thermal conductivity kappa(L) appears to increase somewhat randomly with small amounts (x<5%) of Sb doping. Subsequently, an investigation of grain structure in these Sb-doped materials has been found to correlate with the anomalous behavior of kappa(L). Furthermore, effects of submicron grain sizes on kappa(L) in ball milled and shock compressed samples are also presented. (C) 2002 American Institute of Physics.
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页码:43 / 45
页数:3
相关论文
共 20 条
[1]   GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].
ALIEV, FG ;
BRANDT, NB ;
MOSHCHALKOV, VV ;
KOZYRKOV, VV ;
SKOLOZDRA, RV ;
BELOGOROKHOV, AI .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171
[2]   Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx [J].
Bhattacharya, S ;
Pope, AL ;
Littleton, RT ;
Tritt, TM ;
Ponnambalam, V ;
Xia, Y ;
Poon, SJ .
APPLIED PHYSICS LETTERS, 2000, 77 (16) :2476-2478
[3]  
BHATTACHARYA S, 2000, MAT RES SOC S P, V626
[4]  
Bhattacharya S., to be published
[5]   TiNiSn: A gateway to the (1,1,1) intermetallic compounds [J].
Cook, BA ;
Harringa, JL ;
Tan, ZS ;
Jesser, WA .
PROCEEDINGS ICT '96 - FIFTEENTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 1996, :122-127
[6]  
Goldsmid H. J., 1964, THERMOELECTRIC REFRI
[7]  
Poon SJ, 2001, SEMICONDUCT SEMIMET, V70, P37
[8]   Description of removable sample mount apparatus for rapid thermal conductivity measurements [J].
Pope, AL ;
Zawilski, B ;
Tritt, TM .
CRYOGENICS, 2001, 41 (10) :725-731
[9]   Apparatus for the rapid measurement of electrical transport properties for both "needle-like" and bulk materials [J].
Pope, AL ;
Littleton, RT ;
Tritt, TM .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (07) :3129-3131