Full vectorial electromagnetic modeling of vertical - cavity surface - Emitting Diode Lasers by the Plane Wave Admittance Method.

被引：4

作者：

Czyszanowski, Tomasz ^{[1
,2
]}

Dems, Maciej ^{[2
]}

Thienponta, Hugo ^{[1
]}

Panajotov, Krassimir ^{[1
,3
]}

机构：

[1] Vrije Univ Brussels, Dept Appl Phys & Photon, Pl laan 2, B-1050 Brussels, Belgium

[2] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland

[3] Inst Solid State Phys, Sofia 1784, Bulgaria

来源：

MICRO-OPTICS, VCSELS, AND PHOTONIC INTERCONNECTS II: FABRICATION, PACKAGING, AND INTEGRATION | 2006年 / 6185卷

关键词：

D O I：

10.1117/12.662658

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a new three dimensional, fully vectorial optical modeling of oxide confined as well as shallow relief verticalcavity surface-emitting laser. Our model is based on the combination of the plane wave expansion method with the method of lines resulting in a fast and accurate computational technique. We carry out hereby a comparison between the Plane Wave Admittance Method (PWAM) and other numerical approaches for VCSEL optical modeling and show very good agreement. Furthermore, this procedure makes it possible to find optimal basic computational parameters for the PWAM in the case of VCSELs.

引用

页数：9

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