Theoretical and experimental investigation of boron diffusion in polycrystalline HfO2 films

被引：17

作者：

Liu, CL ^{[1
]}

Jiang, ZX

Hegde, RI

Sieloff, DD

Rai, RS

Gilmer, DC

Hobbs, CC

Tobin, PJ

Lu, SF

机构：

[1] Motorola Inc, Adv Proc Dev & External Res Lab, Mesa, AZ 85202 USA

[2] Motorola Inc, Adv Proc Dev & External Res Lab, Austin, TX 78721 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.1501766

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present ab initio modeling results including formation, migration, and activation energies for B diffusion through bulk and grain boundaries in polycrystalline HfO2 films. Modeling results clearly indicate that B can penetrate through a 40 Angstrom HfO2 film via grain boundary diffusion, but not by bulk diffusion. Secondary ion mass spectroscopy analysis of B concentration profiles for polysilicon/HfO2/Si gate stacks after different anneals showed double B peaks at the interfaces and thus confirmed the modeling prediction. (C) 2002 American Institute of Physics.

引用

页码：1441 / 1443

页数：3

共 12 条

[1] Boron diffusion and penetration in ultrathin oxide with poly-Si gate [J].

Cao, M ;

Voorde, PV ;

Cox, M ;

Greene, W .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (08) :291-293

[2]

Jonsson H., 1998, CLASS QUANTUM DYN CO, P385, DOI [10.1142/9789812839664_0016, DOI 10.1142/9789812839664_0016]

[3] AB-INITIO MOLECULAR-DYNAMICS SIMULATION OF THE LIQUID-METAL AMORPHOUS-SEMICONDUCTOR TRANSITION IN GERMANIUM [J].

KRESSE, G ;

HAFNER, J .

PHYSICAL REVIEW B, 1994, 49 (20) :14251-14269

[4] Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

PHYSICAL REVIEW B, 1996, 54 (16) :11169-11186

[5] ABINITIO MOLECULAR-DYNAMICS FOR LIQUID-METALS [J].

KRESSE, G ;

HAFNER, J .

PHYSICAL REVIEW B, 1993, 47 (01) :558-561

[6] Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50

[7] EAM STUDY OF SURFACE SELF-DIFFUSION OF SINGLE ADATOMS OF FCC METALS NI, CU, AL, AG, AU, PD, AND PT [J].

LIU, CL ;

COHEN, JM ;

ADAMS, JB ;

VOTER, AF .

SURFACE SCIENCE, 1991, 253 (1-3) :334-344

[8] Ab initio investigation of C incorporation mechanisms on Si(001) [J].

Liu, CL ;

Borucki, LJ ;

Merchant, T ;

Stoker, M ;

Korkin, A .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :885-887

[9] DIFFUSION ALONG [001] TILT BOUNDARIES IN THE AU/AG SYSTEM .2. ATOMISTIC MODELING AND INTERPRETATION [J].

MA, Q ;

LIU, CL ;

ADAMS, JB ;

BALLUFFI, RW .

ACTA METALLURGICA ET MATERIALIA, 1993, 41 (01) :143-151

[10]

PORTER DA, 1987, PHASE TRANSFORMATION

← 1 2 →