Effect of Ta2O5 doping on the electrical properties of 0.99SnO2•0.01CoO ceramic

被引：14

作者：

Antunes, AC ^{[1
]}

Antunes, SM

Pianaro, SA

Longo, E

Varela, JA

机构：

[1] Univ Estadual Ponta Grossa, BR-84031510 Ponta Grossa, PR, Brazil

[2] Univ Fed Sao Carlos, Dept Quim, BR-13560905 Sao Carlos, SP, Brazil

[3] Univ Estadual Paulista, Inst Quim, BR-14801970 Araraquara, SP, Brazil

来源：

JOURNAL OF MATERIALS SCIENCE | 2000年 / 35卷 / 06期

关键词：

D O I：

10.1023/A:1004748006457

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

引用

页码：1453 / 1458

页数：6

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