Novel electrode design for single-carrier charge collection in semiconductor nuclear radiation detectors

被引:33
作者
Butler, JF
机构
[1] Digirad, San Diego, CA 92121
关键词
nuclear radiation detectors; semiconductor; room temperature; CdZnTe;
D O I
10.1016/S0168-9002(97)00782-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
a new electrode configuration comprising a cathode, a small anode and a ''control electrode'' resulted in energy resolutions as low as 0.72% and photopeak efficiencies near unity at 511 keV with CdZnTe room temperature nuclear detectors. The control electrode transiently accepts a large fraction of charge that would otherwise be induced on the anode by mobile charges in transit and, in effect, enhances the near-field effect. Control electrode configurations are adaptable to both single-element detectors and multi-element arrays, and are compatible with existing semiconductor detector manufacturing technology.
引用
收藏
页码:427 / 430
页数:4
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