High carrier mobility in single-crystal plasma-deposited diamond

被引：1079

作者：

Isberg, J

Hammersberg, J

Johansson, E

Wikström, T

Twitchen, DJ

Whitehead, AJ

Coe, SE

Scarsbrook, GA

机构：

[1] ABB Grp Serv Ctr, Corp Res Nanotechnol & Innovat Mat Grp, Vasteras, Sweden

[2] De Beers Ind Diamonds, Ascot, Berks, England

来源：

SCIENCE | 2002年 / 297卷 / 5587期

关键词：

D O I：

10.1126/science.1074374

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

引用

页码：1670 / 1672

页数：3

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