Hard Si-N-C coatings produced by pulsed glow discharge deposition

被引：27

作者：

Afanasyev-Charkin, I ^{[1
]}

Nastasi, M ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 186卷 / 1-2期

关键词：

plasma source ion implantation (PSH); plasma immersion ion implantation (PIII); amorphous; silicon nitride; silicon carbide;

D O I：

10.1016/j.surfcoat.2004.04.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hard Si-N-C films with different concentration of carbon were obtained using pulsed glow discharge deposition (PGD) at 4 kV pulsed voltage. The gases used in this study were silane (SiH4), nitrogen (N-2) and acetylene (C2H2). The FTIR analysis of the films showed the existence of bonds between all components of the ternary system. The absence of separation of the structure into binary components such as silicon nitride and carbon nitride leads to the high hardness of the films. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：108 / 111

页数：4

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