Formation of beta-C3N4 phase in C-N films deposited by reactive ionized cluster beam method

被引：16

作者：

Feng, JY

Zheng, Y

Xie, JQ

机构：

[1] Dept. of Mat. Sci. and Engineering, Tsinghua University

来源：

MATERIALS LETTERS | 1996年 / 27卷 / 4-5期

基金：

中国国家自然科学基金;

关键词：

beta-C3N4; phase; C-N films; deposition; reactive ionized cluster beam method;

D O I：

10.1016/0167-577X(95)00288-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride thin films have been prepared by the reactive ionized cluster beam (RICE) method using mixed beam of activated carbon and nitrogen atoms and atom clusters produced from polyethylene and NH3. The structure of the films has been characterized by electron diffraction analysis that shows strong evidences suggesting the formation of crystalline beta-C3N4 phase embedded in the amorphous film matrix. Rutherford backscattering measurements show that average nitrogen content is up to 40%. X-ray photoelectron spectroscopy indicates that carbon and nitrogen form a weak polarized covalent bond in these C-N thin films.

引用

收藏

页码：219 / 223

页数：5

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