Tunnel magnetoresistance and interfacial electronic state

被引：3

作者：

Inoue, J ^{[1
]}

Itoh, H

机构：

[1] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 19期

关键词：

D O I：

10.1088/0022-3727/35/19/317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions (FTJs), by making use of the periodic Anderson model and the linear response theory. It is indicated that the TMR ratio is strongly reduced depending on the position of the d-levels of impurities, based on reduction in the spin-dependent s-electron tunnelling in the majority spin state. The results are compared with experimental results for Cr-dusted FTJs, and also with results for metallic multilayers for which similar reduction in giant magnetoresistance has been reported.

引用

页码：2432 / 2436

页数：5

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