Recent advances in forced-flow, thermal-gradient CVI for refractory composites

被引:37
作者
Probst, KJ
Besmann, TM
Stinton, DP
Lowden, RA
Anderson, TJ
Starr, TL
机构
[1] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Univ Louisville, Dept Chem Engn, Louisville, KY 40292 USA
关键词
chemical vapor infiltration; continuous fiber ceramic composites; CVI; FCVI; forced-flow/thermal-gradient technique; refractory composites; silicon carbide;
D O I
10.1016/S0257-8972(99)00459-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 [材料科学与工程]; 080502 [材料学];
摘要
Chemical vapor infiltration (CVI) is simply chemical vapor deposition (CVD) on the internal surfaces of a porous preform and has been used to produce a variety of developmental and application materials. The greatest use of CVI is to infiltrate continuous-filament preforms taking advantage of the relatively low-stress CVD process. In CVI, reactants are introduced in the porous preform via either diffusion or forced convection and the CVD precursors deposit the appropriate phase(s). As infiltration proceeds, the deposit on the internal surfaces becomes thicker. Thus, after some length of time, the growing surfaces meet bonding the preform and fill much of the free volume with deposited matrix. The forced-flow/thermal-gradient technique (FCVI) developed at Oak Ridge National Laboratory overcomes the problems of slow diffusion and restricted permeability, and has demonstrated a capability to produce thick-walled, simple-shaped, SiC-matrix components in times of the order of hours. A model has been developed for the process that predicts flow, thermal and density profiles as a function of time. The results have been compared with an initial set of experiments and indicate qualitative agreement. It is expected that improved property relationships, such as permeability and thermal conductivity as a function of density, will allow the model to closely represent the FCVI process and be useful in fabrication and product optimization. (C) 1999 Published by Elsevier Science S.A. Ail rights reserved.
引用
收藏
页码:250 / 258
页数:9
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