Characterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling

被引：7

作者：

Yen, A ^{[1
]}

Tritchkov, A ^{[1
]}

Stirniman, JP ^{[1
]}

Vandenberghe, G ^{[1
]}

Jonckheere, R ^{[1
]}

Ronse, K ^{[1
]}

Vandenhove, L ^{[1
]}

机构：

[1] PRECIM CO,PORTLAND,OR

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the characterization of optical proximity effects and their correction in deep-UV lithography using an empirically derived model for calculating feature sizes in resist. The model is based on convolution of the mask pattern with a set of kernels determined from measuring the printed test structures in resist. The fit of the model to the measurement data is reviewed. The model is then used for proximity correction using commercially available proximity correction software. Corrections based on this model is effective in restoring resist linearity and in reducing line-end shortening. It is also more effective in reducing optical proximity effects than corrections based only on aerial image calculations. (C) 1996 American Vacuum Society.

引用

页码：4175 / 4178

页数：4

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