Theory of laser gain in InGaN quantum dots

被引：16

作者：

Chow, WW ^{[1
]}

Schneider, HC ^{[1
]}

机构：

[1] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1509476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theory for gain is developed for wide-bandgap nitride-based quantum-dot laser structures. A semiclassical laser theory is used to describe the optical susceptibility in the presence of strong many-body Coulomb interaction and quantum-confined Stark effect. Application of this theory shows distinctly different gain behavior depending on quantum dot dimensions, because of the interplay of these effects. (C) 2002 American Institute of Physics.

引用

页码：2566 / 2568

页数：3

共 13 条

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