Preparation, characterization and CO sensing of Au/iron oxide thin films

被引：16

作者：

Neri, G

Bonavita, A

Galvagno, S

Pace, C

Donato, N

机构：

[1] Univ Messina, Dipartimento Chim Ind & Ingn Mat, I-98166 Messina, Italy

[2] Univ Messina, Dipartimento Fis Mat & Tecnol Fis Avanzate, I-98166 Messina, Italy

[3] Univ Messina, INFM, I-98166 Messina, Italy

[4] Univ Palermo, Dipartimento Ingn Elettr, I-90128 Palermo, Italy

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 09期

关键词：

D O I：

10.1023/A:1019629800031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The preparation and characterization of Au-doped iron oxide thin films is reported. Doped-thin films have been prepared by a liquid-phase deposition (LPD) method from aqueous solutions in the presence of a reactive atmosphere containing NH3. The morphology and microstructure of the prepared films are described. The effect of some process parameters (precursor solution concentration, calcination temperature) on the film formation, thickness and microstructure are investigated. Sensor devices based on Au/Fe2O3 thin films deposited on alumina by the LPD method, are sensitive to CO at operating temperatures between 200-400 degreesC. (C) 2002 Kluwer Academic Publishers.

引用

页码：561 / 565

页数：5

共 17 条

[1] Turning down the heat on semiconductor growth: Solution-chemical syntheses and the solution-liquid-solid mechanism [J].