Resonant tunneling through ultrasmall quantum dots: Zero-bias anomalies, magnetic-field dependence, and boson-assisted transport

被引:308
作者
Konig, J [1 ]
Schmid, J [1 ]
Schoeller, H [1 ]
Schon, G [1 ]
机构
[1] HELSINKI UNIV TECHNOL, DEPT TECH PHYS, FIN-02150 ESPOO, FINLAND
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词
D O I
10.1103/PhysRevB.54.16820
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin degenerate or can be split by a magnetic field. Furthermore we discuss the influence of a bosonic environment. Using a red-time diagrammatic formulation, we calculate transition rates, the spectral density, and the nonlinear I-V characteristic. The spectral density shows a multiplet of Kondo peaks split by the transport voltage and the boson frequencies and shifted by the magnetic field. This leads to zero-bias anomalies in the differential conductance, which agree well with recent experimental results for the electron transport through single-charge traps. Furthermore, we predict that the sign of the zero-bias anomaly depends on the level position relative to the Fermi level of thr leads.
引用
收藏
页码:16820 / 16837
页数:18
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