Antimony doped Bi2O3 thin films

被引:1
作者
Fruth, V
Popa, M
Berger, D
Predoana, L
Gatner, M
Zaharescu, M
机构
[1] Romanian Acad, Inst Phys Chem, Bucharest 77208, Romania
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Univ Politehn Bucuresti, Dept Inorgan Chem, Bucharest 78126, Romania
来源
EURO CERAMICS VIII, PTS 1-3 | 2004年 / 264-268卷
关键词
bismuth oxides; ionic conductor; sol-gel route;
D O I
10.4028/www.scientific.net/KEM.264-268.1245
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bismuth oxide system exhibit high oxide ionic conductivity and have been proposed as good electrolyte materials for application such as solid oxide fuel cell (SOFC) and oxygen sensor. A preliminary investigation for depositing thin and dense antimony doped Bi2O3 films based on wet chemical routes was realized. Antimony doped Bi2O3 films were deposited onto glass substrate from bismuth nitrate and antimony precursor solutions. As chelating agent polyethyleneglycol (PEG) was used and the above-mentioned precursor solutions were sufficiently viscous. Crystallization behavior and microstructure evolutions of the obtained films were investigated using spectroscopic ellipsometry (SE), polarized microscope observation, X-ray diffractometry (XRD), and infrared spectrometry (IR). The thickness and the porosity of the films were evaluated. The preparation techniques differ mainly in precursor materials and method of deposition, leading to different quality of the resulting films.
引用
收藏
页码:1245 / 1248
页数:4
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