Study of the microwave electrodynamic response of MgB2 thin films

被引:8
作者
Andreone, A
Cassinese, A
Cantoni, C
Di Gennaro, E
Lamura, G
Maglione, MG
Paranthaman, M
Salluzzo, M
Vaglio, R
机构
[1] Univ Naples Federico II, INFM, Fac Ingn, I-80125 Naples, Italy
[2] Univ Naples Federico II, Dipartimento Sci Fisiche, Fac Ingn, I-80125 Naples, Italy
[3] Oak Ridge Natl Lab, Oak Ridge, TN USA
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 372卷 / PART 2期
关键词
MgB2; superconductor; thin films; microwave surface impedance;
D O I
10.1016/S0921-4534(02)00994-2
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a study on the power dependence of the microwave surface impedance in thin films of the novel superconductor MgB2. 500 nm thick samples exhibiting critical temperatures ranging between 26 and 38 K are synthesized by an ex situ post-anneal of e-beam evaporated boron in the presence of an Mg vapor at 900 degreesC. Preliminary results on films grown in situ by a high rate magnetron sputtering technique from stoichiometric MgB2 and Mg targets are also reported. Microwave measurements have been carried out employing a dielectrically loaded niobium superconducting cavity operating at 19.8 GHz and 4 K. The study shows that the electrodynamic response of MgB2 films is presently dominated by extrinsic sources of dissipation, appearing already at low microwave power. likely to be ascribed to the presence of grain boundaries and normal inclusions in the samples. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1287 / 1290
页数:4
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