Epitaxy and morphology of deposited alpha-Fe films on high-index planes of Cu substrates

被引：1

作者：

Fujii, T

Abe, T

Inoue, S

Kato, M

机构：

[1] Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama, 4259 Nagatsuta, Midori-ku

[2] Kawasaki Steel Corporation, Kurashiki

[3] Nippon Steel Corporation, Tokai, 476, 3

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1996年 / 74卷 / 02期

关键词：

D O I：

10.1080/01418619608242146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin alpha-Fe films were deposited onto the high-index planes {212}, {103}, {113}, {203} and {213} of Cu substrates. Multiple epitaxial relationships were found to exist in each substrate specimen. However, the alpha-Fe planes of the deposited layer were always related to the Cu substrate planes by the Bain correspondence. Particular growth directions of the alpha-Fe films parallel to [110] on the Cu substrates were observed for the {212} and {113} substrate specimens. Simple geometrical criteria proposed previously to explain the epitaxial relationships between low-index planes are also highly applicable to the prediction of the epitaxies between high-index planes. Three-dimensional orientation relationships, rather than two-dimensional orientation relationships at the interface, must be considered in order to understand the crystallography and morphology of the alpha-Fe films.

引用

页码：317 / 336

页数：20

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