Effect of visible light on the water contact angles on illuminated oxide semiconductors other than TiO2

被引：47

作者：

Rico, V. ^{[1
]}

Lopez, C. ^{[1
]}

Borras, A. ^{[1
]}

Espinos, J. P. ^{[1
]}

Gonzalez-Elipe, A. R. ^{[1
]}

机构：

[1] Univ Seville, CSIC, Inst Ciencia Mat Sevilla, Seville 41092, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 17期

关键词：

wetting; oxide semiconductors; visible light irradiation;

D O I：

10.1016/j.solmat.2006.05.005

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Wide band gap semiconductor oxides such as TiO2, Ta2O5, ZnO, indium-tin oxide, InTaO4 or In2O3 are materials with water contact angles in dark between 60 degrees and 130 degrees. The present investigation shows that thin films of these oxides become hydrophilic when they are irradiated with ultraviolet light. This finding indicates that the transformation of the wetting properties of illuminated wide band gap oxides is a common phenomenon not restricted to TiO2. An additional evidence found for ZnO and InTaO4 is that the water contact angle decreases by 30 degrees/40 degrees when they are irradiated with visible light. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2944 / 2949

页数：6

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