Electronic structure of two-dimensional crystals from ab initio theory

被引:945
作者
Lebegue, S. [1 ]
Eriksson, O. [2 ]
机构
[1] Univ Henri Poincare, CNRS, UMR 7036, Lab Cristallog & Modelisat Mat Mineraux & Biol, F-54506 Vandoeuvre Les Nancy, France
[2] Uppsala Univ, Dept Phys & Mat Sci, SE-75121 Uppsala, Sweden
来源
PHYSICAL REVIEW B | 2009年 / 79卷 / 11期
关键词
ab initio calculations; band structure; molybdenum compounds; niobium alloys; selenium alloys; semiconductor materials; AUGMENTED-WAVE METHOD; GAS; 2H-NBSE2; GRAPHENE; 2H-MOS2; STATE;
D O I
10.1103/PhysRevB.79.115409
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on ab initio calculations of the two-dimensional systems MoS2 and NbSe2, which recently were synthesized. We find that two-dimensional MoS2 is a semiconductor with a gap which is rather close to that of the three-dimensional analog, and that NbSe2 is a metal, which is similar to the three-dimensional analog of this compound. We further computed the electronic structure of the two-dimensional hexagonal (graphene-like) lattices of Si and Ge and compared them with the electronic structure of graphene. It is found that the properties related to the Dirac cone do not appear in the case of two-dimensional hexagonal germanium, which is metallic, contrary to two-dimensional hexagonal silicon, also known as silicene, which has an electronic structure very similar to the one of graphene, making them possibly equivalent.
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页数:4
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