Electronic properties of microcrystalline silicon investigated by electron spin resonance and transport measurements

被引：62

作者：

Finger, F ^{[1
]}

Müller, J ^{[1
]}

Malten, C ^{[1
]}

Carius, R ^{[1
]}

Wagner, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, ISI PV, D-52425 Julich, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00802-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron spin resonance and transport properties of microcrystalline silicon were investigated. Identification and location of the resonance states in the material are discussed. We analyse the properties of the conduction electron resonance and the relation of the corresponding states with electronic transport. Conduction band tail states within the crystalline regions of the material an proposed as a requirement for the interpretation of the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：511 / 518

页数：8

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