Performance of double junction a-Si solar cells by using ZnO:Al films with different electrical and optical properties at the n/metal interface

被引：18

作者：

Ray, S ^{[1
]}

Das, R ^{[1
]}

Barua, AK ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Energy Res Unit, Jadavpur 700032, Kolkata, India

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

ZnO : Al films; a-Si solar cells;

D O I：

10.1016/S0927-0248(02)00128-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

High-quality ZnO:Al films have been prepared by using RF-magnetron-sputtering method with resistivity ranging from 10(-1) to 10(-4) Omega cm and transmittance above 90% in visible region. We have fabricated small area (1 cm(2)) double junction (a-Si/a-Si) solar cells using ZnO/Al and ZnO/Ag as back contact. The conversion efficiency of double junction a-Si solar cell increases from 9.9% to 10.9% by using ZnO/Al back contact and to 11.4% by using ZnO/Ag as back contact. Effect of variation of thickness of i-layer on performance of the cell has also been studied. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：387 / 392

页数：6