TFBAR filters for 2 GHz wireless applications

被引：8

作者：

Kim, KW ^{[1
]}

Yook, JG ^{[1
]}

Gu, MG ^{[1
]}

Song, WY ^{[1
]}

Yoon, YJ ^{[1
]}

Park, HK ^{[1
]}

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul, South Korea

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011861

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin film bulk acoustic resonators (TFBAR) using AlN with two electrodes have been used in the design of band pass filters at 2 GHz frequency bands. Both membrane and air-gap are used to suppress the over-mode phenomenon. Resonator modeling was performed based on measured frequency response of a single resonator with modified Butterworth-Van Dyke (MBVD) model. Electric coupling coefficient, k, is 0.2075 (4.3%) and Q is 577.18 for a single TFBAR. Additional TFBAR is used to improve out of band rejection in the conventional ladder topology and each contributes -3 dB suppression improvement at stop-band. Four different types of ladder filters were fabricated and modelled and revealed only -2 to -3 dB insertion loss for all the cases with bandwidth of around 52 MHz.

引用

页码：1181 / 1184

页数：4

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