Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement

被引:348
作者
Ledoux, G
Gong, J
Huisken, F
Guillois, O
Reynaud, C
机构
[1] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
[2] CEA Saclay, Serv Photons Atomes & Mol, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1063/1.1485302
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon nanocrystals with diameters between 2.5 and 8 nm were prepared by pulsed CO2 laser pyrolysis of silane in a gas flow reactor and expanded through a conical nozzle into a high vacuum. Using a fast-spinning molecular-beam chopper, they were size-selectively deposited on dedicated quartz substrates. Finally, the photoluminescence of the silicon nanocrystals and their yield were measured as a function of their size. It was found that the photoluminescence follows very closely the quantum-confinement model. The yield shows a pronounced maximum for sizes between 3 and 4 nm. (C) 2002 American Institute of Physics.
引用
收藏
页码:4834 / 4836
页数:3
相关论文
共 17 条
[1]   Influence of light intensity on the photoluminescence of silicon nanostructures [J].
Amans, D ;
Guillois, O ;
Ledoux, G ;
Porterat, D ;
Reynaud, C .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (08) :5334-5340
[2]   ELECTRONIC SPECTROSCOPY AND PHOTOPHYSICS OF SI NANOCRYSTALS - RELATIONSHIP TO BULK C-SI AND POROUS SI [J].
BRUS, LE ;
SZAJOWSKI, PF ;
WILSON, WL ;
HARRIS, TD ;
SCHUPPLER, S ;
CITRIN, PH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (10) :2915-2922
[3]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[4]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[5]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[6]   Gas-phase characterization of silicon nanoclusters produced by laser pyrolysis of silane [J].
Ehbrecht, M ;
Huisken, F .
PHYSICAL REVIEW B, 1999, 59 (04) :2975-2985
[7]   Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition [J].
Ehbrecht, M ;
Kohn, B ;
Huisken, F ;
Laguna, MA ;
Paillard, V .
PHYSICAL REVIEW B, 1997, 56 (11) :6958-6964
[8]   Photoluminescence and electroluminescence from porous silicon [J].
Fauchet, PM .
JOURNAL OF LUMINESCENCE, 1996, 70 :294-309
[9]   SIZE DEPENDENCE OF EXCITONS IN SILICON NANOCRYSTALS [J].
HILL, NA ;
WHALEY, KB .
PHYSICAL REVIEW LETTERS, 1995, 75 (06) :1130-1133
[10]   Effect of passivation and aging on the photoluminescence of silicon nanocrystals [J].
Ledoux, G ;
Gong, J ;
Huisken, F .
APPLIED PHYSICS LETTERS, 2001, 79 (24) :4028-4030