Optical interferometry for surface measurements of CMP pads

被引：71

作者：

Stein, D

Hetherington, D

Dugger, M

Stout, T

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87123

[2] WYKO CORP,TUCSON,AZ 85706

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 10期

关键词：

chemical-mechanical polishing; optical interferometry; oxide films; surface morphology;

D O I：

10.1007/BF02655586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical interferometry was used to quantitatively characterize the surface of chemical-mechanical polishing (CMP) pads used to polish oxide films. We discuss the optical interferometry technique, including a description of the parameters necessary to compare pad samples. Flat, mesa-like structures formed on the pad during the first 5 min polish when conditioning was not used. The data from the optical interferometer indicated that the surface topography did not change with subsequent polishing, even though the thermal oxide removal rate continued to decrease. We found conditioning roughened the pad surface. Rougher pad surfaces removed more oxide during a single 5 min polish than comparatively smooth pad surfaces. Data indicates that conditioning increases and stabilizes pad surface roughness.

引用

页码：1623 / 1627

页数：5