Properties of doped-YBCO bicrystal grain-boundary junctions for Josephson field effect transistor

被引：7

作者：

Sung, GY ^{[1
]}

Suh, JD ^{[1
]}

Lee, SG ^{[1
]}

机构：

[1] KOREA UNIV,JOCHIWON 339800,CHUNGNAM,SOUTH KOREA

来源：

PHYSICA C | 1997年 / 282卷

关键词：

D O I：

10.1016/S0921-4534(97)01322-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the properties of hole-overdoped and underdoped YBa2Cu3O7-x, (YBCO) grain-boundary junctions (GBJ) on the 24 degrees tilt SrTiO3, (100) bicrystals as a function of temperature and junction width. Epitaxial thin films of YBCO, Y0.7Ca0.3Ba2Cu3O7-y (Ca-YBCO), and YBa2Cu2.79Co0.21O7-y (Co-YBCO) were deposited by pulsed laser deposition, and the GBJs were fabricated by standard photolithography with argon ion-milling. We measured the IcRn products of similar to 1.2 mV for Ca-YBCO and similar to 0.3 mV for Co-YBCO GBJ at 27 K. Critical current densities(J(c)) of the junctions were 1.4x10(3) and 3.0x10(4) A/cm(2) at 27 K for the Ca- and Co-YBCO GBJs, respectively. This is explained in terms of a weak-link behavior at the grain-boundaries in comparison with the bulk properties of the doped YBCO films.

引用

页码：2475 / 2476

页数：2

共 6 条

[1]

CHAR K, COMMUNICATION

[2] 3 TERMINAL YBACUO JOSEPHSON DEVICE WITH QUASI-PARTICLE INJECTION GATE [J].