Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix

被引：23

作者：

Zhukov, AE ^{[1
]}

Egorov, AY ^{[1
]}

Kovsh, AR ^{[1
]}

Ustinov, VM ^{[1
]}

Ledentsov, NN ^{[1
]}

Maksimov, MV ^{[1
]}

Tsatsulnikov, AF ^{[1
]}

Zaitsev, SV ^{[1
]}

Gordeev, NY ^{[1
]}

Kopev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-10623 BERLIN,GERMANY

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 04期

关键词：

D O I：

10.1134/1.1187173

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Arrays of vertically aligned InGaAs quantum dots in a AlGaAs matrix have been investigated. It is shown that increasing the band gap of the matrix material makes it possible to increase the localization energy of quantum dots relative to the edge of the matrix band, as well as the states of the wetting layer. The use of an injection laser as the active region makes it possible to decrease the thermal filling of higher-lying states, and thereby decrease the threshold current density to 63 A/cm(2) at room temperature. A model explaining the negative characteristic temperature section observed at low temperatures is proposed. The model is based on the assumption that a transition occurs from nonequilibrium to equilibrium filling of the states of the quantum dots. (C) 1997 American Institute of Physics.

引用

页码：411 / 414

页数：4

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