Observation of the nanoscale epitaxial growth of diamond on Si (100) surface

被引：4

作者：

Song, SG ^{[1
]}

Chen, CL ^{[1
]}

Mitchell, TE ^{[1
]}

Hackenberger, LB ^{[1
]}

Messier, R ^{[1
]}

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 03期

关键词：

D O I：

10.1063/1.360975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a approximate to 7 degrees tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. (C) 1996 American Institute of Physics.

引用

页码：1813 / 1815

页数：3

共 7 条

[1] ORIENTED CUBIC NUCLEATIONS AND LOCAL EPITAXY DURING DIAMOND GROWTH ON SILICON (100) SUBSTRATES [J].