Floating-zone growth of rutile single crystals inclined at 48° to the c-axis

被引:16
作者
Higuchi, M [1 ]
Hatta, K
Takahashi, J
Kodaira, K
Kaneda, H
Saito, J
机构
[1] Hokkaido Univ, Grad Sch Engn, Div Mat Sci & Engn, Sapporo, Hokkaido 0608628, Japan
[2] Mitsubishi Kagaku Corp, Optoelect Labs, Tsukuba Plant, Ushi Ku, Ibaraki, Osaka 3001295, Japan
关键词
rutile single crystal; floating-zone method; growth direction; Savart plate; low-angle grain boundary; extinction ratio;
D O I
10.1016/S0022-0248(99)00446-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Rutile single crystals were grown at 48 degrees to the c-axis by the floating-zone method. Under a low oxygen partial pressure (a CO2 stream), which was effective to grow high-quality rutile crystals in the case of the c-axis growth, the formation of low-angle grain boundaries could not be suppressed in a pure rutile crystal grown at an angle of 48 degrees to the c-axis. Even in an oxygen stream, the addition of a small amount of ZrO2 or Al2O3 and a higher growth rate were effective to reduce the number of low-angle grain boundaries in the growth of rutile crystals inclined at 48 degrees to the c-axis. In particular, completely grain boundary free rutile crystals were grown with the addition of 1.0 at% ZrO2 at a growth rate of 10 mm/h. The extinction ratio at any point of a Savart plate made of the Zr-doped rutile single crystal was at least 50 dB. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:501 / 507
页数:7
相关论文
共 10 条
[1]  
FRANCON M, 1971, POLARIZATION INTERFE
[2]   Floating zone growth and characterization of aluminum-doped rutile single crystals [J].
Hatta, K ;
Higuchi, M ;
Takahashi, J ;
Kodaira, K .
JOURNAL OF CRYSTAL GROWTH, 1996, 163 (03) :279-284
[3]   EFFECTS OF SC2O3 ADDITION ON FLOATING ZONE GROWTH OF RUTILE SINGLE-CRYSTALS [J].
HIGUCHI, M ;
TAKAHASHI, J ;
KODAIRA, K .
JOURNAL OF CRYSTAL GROWTH, 1992, 125 (3-4) :571-575
[4]   EFFECT OF ZRO2 ADDITION ON FZ GROWTH OF RUTILE SINGLE-CRYSTALS [J].
HIGUCHI, M ;
KODAIRA, K .
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :495-499
[5]   GROWTH OF RUTILE SINGLE-CRYSTALS BY FLOATING ZONE METHOD [J].
HIGUCHI, M ;
HOSOKAWA, T ;
KIMURA, S .
JOURNAL OF CRYSTAL GROWTH, 1991, 112 (2-3) :354-358
[6]   NONEQUILIBRIUM SURFACE SEGREGATION IN ALUMINUM-DOPED TIO2 UNDER AN OXIDIZING POTENTIAL - EFFECTS ON REDOX COLOR-BOUNDARY MIGRATION [J].
IKEDA, JAS ;
CHIANG, YM ;
FABES, BD .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (06) :1633-1640
[7]   OBSERVATION OF ETCH PATTERNS IN TIO2 SINGLE CRYSTALS [J].
NAKAZUMI, Y ;
SUZUKI, K ;
YAZIMA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (11) :1806-&
[8]  
NAKAZUMI Y, 1968, SERAMIKKUSU, V3, P731
[9]   COMPACT OPTICAL ISOLATOR FOR FIBERS USING BIREFRINGENT WEDGES [J].
SHIRASAKI, M ;
ASAMA, K .
APPLIED OPTICS, 1982, 21 (23) :4296-4299
[10]  
VANVLECK LH, 1980, ELEMENTS MAT SCI ENG