In this paper the method of forming electrophotographic material by reduction of diethilselenite to elemental selenium by hydrazine is described. Electrophotographic layers thus obtained were found to be bipolar and possess the following parameters:initial potential U-in similar or equal to 4 x 10(5) V/cm, time of dark half-decay tau(1/2) similar or equal to 80 s, sensitivity according to half-decay of potential S-1/2 similar or equal to 0.15 lk(-1) S-1 and residual potential U-res less than or similar to 0.1U(in). Obvious disadvantages associated with electrophotographic layers (Els) of t-Se were eliminated by this process. (C) 2000 Elsevier Science S.A. All rights reserved.