Physics of grain boundaries in the colossal magnetoresistance manganites

被引：189

作者：

Gross, R

Alff, L

Büchner, B

Freitag, BH

Höfener, C

Klein, J

Lu, YF

Mader, W

Philipp, JB

Rao, MSR

Reutler, P

Ritter, S

Thienhaus, S

Uhlenbruck, S

Wiedenhorst, B

机构：

[1] Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany

[2] Univ Bonn, Inst Anorgan Chem, D-53117 Bonn, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 211卷 / 1-3期

关键词：

doped manganites; colossal magnetoresistance; grain boundaries; electronic transport; band bending;

D O I：

10.1016/S0304-8853(99)00727-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical transport properties of grain boundaries in epitaxial thin films of the perovskite manganites have been studied as a function of temperature and applied magnetic field. Below the Curie temperature T-C an additional grain boundary resistance, highly nonlinear current-voltage curves, and a large magnetoresistive effect in the whole temperature regime below T-C are found. The results can be explained consistently by the presence of a disordered, a few nm wide paramagnetic grain boundary layer that is depleted below T-C due to an increase of the workfunction of the ferromagnetic grain material adjacent to this layer. The related band bending and space charge effects are important for the physics of grain boundaries in the manganites. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：150 / 159

页数：10

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[1] Electrostatics of vortices in type-II superconductors [J].