Growth of amorphous-layer-free microcrystalline silicon on insulating glass substrates by plasma-enhanced chemical vapor deposition

被引：46

作者：

Zhou, JH ^{[1
]}

Ikuta, K ^{[1
]}

Yasuda, T ^{[1
]}

Umeda, T ^{[1
]}

Yamasaki, S ^{[1
]}

Tanaka, K ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.119958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a triode plasma-enhanced chemical vapor deposition (PECVD) system and high H-2 dilution of SiH4 (down to a SiH4/H-2 gas flow ratio of 0.33/99), amorphous-layer-free mu c-Si:H has been successfully grown on insulating glass substrates in the continuous PECVD growth mode. It is demonstrated that an ultrathin layer of such mu c-Si:H can serve as a seed layer to facilitate an epitaxial-like growth of mu c-Si:H (seeded growth). (C) 1997 American Institute of Physics.

引用

页码：1534 / 1536

页数：3

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