Optical determination of growth variants in ordered GaInP

被引:7
作者
Alsina, F
Garriga, M
Alonso, MI
Tortosa, S
Pascual, J
Geng, C
Scholz, F
Glew, RW
机构
[1] UNIV AUTONOMA BARCELONA,DEPT FIS,BELLATERRA 08193,SPAIN
[2] CSIC,INST CIENCIA MAT BARCELONA,BELLATERRA 08193,SPAIN
[3] UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
[4] BNR EUROPE LTD,HARLOW CM17 9NA,ESSEX,ENGLAND
关键词
semiconductors; optical properties; order-disorder effects;
D O I
10.1016/S0038-1098(96)00652-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants (<[(1)over bar 11]> or <[1(1)over bar 1]>) is grown. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:757 / 760
页数:4
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