All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1-naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4-diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl-1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8-hydroxyquinolinato)aluminum (Alq(3)). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. Two WOLEDs, Device B and C, different in layer thickness of Alq(3), 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as 25,000 cd/m(2). For practical solid state lighting application, EL intensity exceeding 1000 cd/m(2) was achieved at current density of 18-19 mA/cm(2) or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency (eta(ext)) of 2.6-2.9% corresponding to power efficiency (eta(P)) of 2.1-2.3 1 m/W at the required brightness. The thickness of Alq(3) layer is decisive in color quality of non-dopant WOLEDs. The Commission Internationale de l'Eclairage (CIE) coordinates of fairly white EL of Device B varied only little from (0.34,0.39) to (0.34,0.38) at driving voltage between 6 and 14 V. Device B exhibited relatively high color rendering indexes (CRIs) in the range of 74-81, which were essentially voltage-independent. The other WOLED, Device C, showed even better color purity of white EL (CIEx,y = 0.34,0.31) along with higher CRI of 83 at 8 V, although higher voltage deteriorated the color quality of WOLED. (c) 2005 Elsevier B.V. All rights reserved.