Nonvolatile, high density, high performance phase change memory

被引：41

作者：

Wicker, G ^{[1
]}

机构：

[1] Ovonyx Inc, Troy, MI 48084 USA

来源：

ELECTRONICS AND STRUCTURES FOR MEMS | 1999年 / 3891卷

关键词：

nonvolatile memory; phase change; chalcogenide; amorphous; memory scaling;

D O I：

10.1117/12.364449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ovonyx, Inc. is developing a nonvolatile memory that is potentially denser, faster, and easier to make than Dynamic RAM. It relies on phase transitions induced by nanosecond heating and cooling of small regions of the memory cell. Initial target markets are FLASH memory, Embedded memory, and DRAM.

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页码：2 / 9

页数：8

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