Electroceramic materials

被引:367
作者
Setter, N [1 ]
Waser, R
机构
[1] Swiss Fed Inst Technol, EPFL, Ceram Lab, CH-1015 Lausanne, Switzerland
[2] Forschungszentrum Julich, D-52425 Julich, Germany
[3] Rhein Westfal TH Aachen, D-52056 Aachen, Germany
关键词
ceramics; functional; electrical properties; electroceramics;
D O I
10.1016/S1359-6454(99)00293-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electroceramics research is driven by technology and device applications. This growing field includes a vast number of magnetic, dielectric, ionically conducting, semiconducting, and superconducting ceramics used in domains as diverse as transportation, industrial production, power engineering, medicine and health care, consumer electronics, and communication. Al the turn of the decade, three major trends are gaining importance: Materials integration issues play an increasingly important role driven by the interest in integrating electroceramic functions into conventional semiconductor chips as well as by the evolution of multifunctional components and systems. The industrial production process currently is in a transition from empirical studies and physical demonstrators into virtual design and testing. To fit into this evolution, for integrated as well as for discrete electroceramic components, a rise in modeling and numerical simulation of material- and device-related properties presently occurs. Electroceramic materials are following in the footsteps of conventional semiconductors with respect to further miniaturization, and are experiencing the same evolution:from microtechnology towards nanotechnology. Nanosize effects and nanotechnology issues are therefore gaining importance. In the context of these three issues, we discuss the research in electroceramics during the last decade and basic trends for the future. (C) 2000 Published by Elsevier Science Ltd on behalf of Acta Metallurgica Inc. All rights reserved.
引用
收藏
页码:151 / 178
页数:28
相关论文
共 257 条
[1]   Modification of ferroelectricity in heteroepitaxial (Ba,Sr)TiO3 films for non-volatile memory applications [J].
Abe, K ;
Yanase, N ;
Sano, K ;
Izuha, M ;
Fukushima, N ;
Kawakubo, T .
INTEGRATED FERROELECTRICS, 1998, 21 (1-4) :197-206
[2]   SAW PROPERTIES OF PLZT EPITAXIAL THIN-FILMS [J].
ADACHI, H ;
MITSUYU, T ;
WASA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 :121-123
[3]   CARBON NANOTUBES AS REMOVABLE TEMPLATES FOR METAL-OXIDE NANOCOMPOSITES AND NANOSTRUCTURES [J].
AJAYAN, PM ;
STEPHAN, O ;
REDLICH, P ;
COLLIEX, C .
NATURE, 1995, 375 (6532) :564-567
[4]   Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications [J].
Alexe, M ;
Scott, JF ;
Curran, C ;
Zakharov, ND ;
Hesse, D ;
Pignolet, A .
APPLIED PHYSICS LETTERS, 1998, 73 (11) :1592-1594
[5]  
ALEXE M, UNPUB APPL PHYS A
[6]  
ALEXE M, UNPUB APPL PHYS LETT
[7]   Miniature piezoelectric hollow sphere transducers (BBs) [J].
Alkoy, S ;
Dogan, A ;
Hladky, AC ;
Langlet, P ;
Cochran, JK ;
Newnham, RE .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1997, 44 (05) :1067-1076
[8]   OXYGEN ION MIGRATION IN LA2CUO4 [J].
ALLAN, NL ;
MACKRODT, WC .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1991, 64 (05) :1129-1132
[9]  
Allen M. P., 1987, COMPUTER SIMULATIONS, DOI [10.1093/oso/9780198803195.001.0001, DOI 10.1093/OSO/9780198803195.001.0001]
[10]  
ALLEN NL, 1993, ADV SOLID ST CHEM, V3, P221