Plasma assisted evaporation of palladium

被引：11

作者：

Laure, C

Brault, P

Thomman, AL

Boswell, R

Rousseau, B

EstradeSzwarckopf, H

机构：

[1] UNIV ORLEANS,GRP RECH ENERGET MILIEUX IONISES,URA 831 CNRS,F-45067 ORLEANS 2,FRANCE

[2] AUSTRALIAN NATL UNIV,PLASMA RES SCH,CANBERRA,ACT,AUSTRALIA

[3] CTR RECH MAT DIV,UMR 131 CNRS,F-45071 ORLEANS 2,FRANCE

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1996年 / 5卷 / 03期

关键词：

D O I：

10.1088/0963-0252/5/3/018

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

We studied the deposition of palladium on silicon using a high-frequency argon plasma. it is shown that the argon ions are focused and sputtered a biased helicoidal palladium wire. An auxiliary continuous discharge enhancing palladium evaporation rate is obtained for a pressure and bias voltage above 50 m Torr and -200 V respectively, as revealed by optical emission spectroscopy. The growth rate is between 0.5 and 20 Angstrom min(-1) as deduced from x-ray photoelectron spectroscopy, Scanning tunnelling microscopy studies reveal that growth proceeds through nucleation.

引用

页码：510 / 513

页数：4

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