High temperature carrier mobility as an intrinsic transport parameter of an organic semiconductor

被引：10

作者：

Tsung, K. K.

So, S. K. ^{[1
]}

机构：

[1] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 04期

关键词：

NPB; Charge transport; Organic semiconductor; High temperature limit of carrier mobility; LIGHT-EMITTING-DIODES; CHARGE-TRANSPORT; DEVICES; DERIVATIVES; ANTHRACENE;

D O I：

10.1016/j.orgel.2009.02.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high temperature limit of hole mobility (mu(infinity)) in N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'-biphenyl)-4,4'diamine (NPB) has been studied by time-of-flight technique. The effect of dopants on mu(infinity) was also investigated. It was found that the mu(infinity) is independent of the nature of dopants. The common mu(infinity) can be applied to estimate the full temperature dependence of zero-field mobility (mu(0)), if mu(0) at one temperature is known. We demonstrate this concept by predicting the room temperature mu(0) of NPB-doped with copper phthalocyanine (CuPc). The mobility prediction of CuPc-doped-NPB was then verified by the classic work of Hoesterey and Letson [D.C. Hoesterey, G.M. Letson, J. Phys. Chem. Solids 24 (1963) 1609]. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：661 / 665

页数：5

共 25 条

[1] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].